FDMB668P Datasheet | Fairchild Semiconductor

FDMB668P P-Channel 1.8V Logic Level Power Trench® MOSFET February 2007 P-Channel 1.8V Logic Level Power Trench MOSFET -20V, -6.1A, 35mΩ Features General Description FDMB668P is excellent for load switch and DC-DC conversion among portable electronics. It achieves an optimal balance among efficiency, thermal transfer and small form by integrating a P-channel MOSFET with minimized on-state resistance into a Micro FET 3x1.9 package. When optimizing the dimension of portable applications, this little device offers a very efficient solution. ® tm - Max r DS(on) = 35mΩ at VGS = -4.5V, ID = -6.1A - Max r DS(on) = 50mΩ at VGS = -2.5V, ID = -5.1A - Max r DS(on) = 70mΩ at VGS = -1.8V, ID = -4.3A - Excellent for portable application at VGS = -1.8V - Thin profile - Maximum height = 0.8mm - Ro HS pliant Applications - Load Switch in: -HDD -Portable Gaming, MP3 -Notebook - DC/DC Conversion PIN 1 GATE .. 1 2 3 4 8 7 6 5 SOURCE Micro FET 3X1.9 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range -Continuous -Pulsed (Note 1a) (Note 1b) (Note 1a) Ratings -20 ±8 -6.1 -40 1.9 0.8 -55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 65 165 °C/W Package Marking and Ordering Information Device Marking 668 Device FDMB668P Package Micro FET 3X1.9 Reel Size 7” Tape Width 8mm Quantity 3000...