FDMC6675BZ - N-Channel MOSFET

Fairchild Semiconductor

FDMC6675BZ Description

FDMC6675BZ P-Channel PowerTrench® MOSFET FDMC6675BZ P-Channel Power Trench® MOSFET -30 V, -20 A, 14.4 mΩ .
The FDMC6675BZ has been designed to minimize losses in load switch applications.

FDMC6675BZ Features

* Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A
* Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A
* HBM ESD protection level of 8 kV typical(note 3)

FDMC6675BZ Applications

* High performance trench technology for extremely low rDS(on)
* High power and current handling capability

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FDMC6675BZ Datasheet Preview — Preview of FDMC6675BZ PDF

Datasheet Details

Part number: FDMC6675BZ
Manufacturer: Fairchild Semiconductor
File Size: 321.35 KB
Datasheet: FDMC6675BZ_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET Fairchild Semiconductor

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