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FDMC6675BZ - N-Channel MOSFET

Datasheet Summary

Description

The FDMC6675BZ has been designed to minimize losses in load switch applications.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

Load Switch in Notebook and Server Notebook Battery Pack Power Ma

Features

  • Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A.
  • Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A.
  • HBM ESD protection level of 8 kV typical(note 3).
  • Extended VGSS range (-25 V) for battery.

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Datasheet preview – FDMC6675BZ

Datasheet Details

Part number FDMC6675BZ
Manufacturer Fairchild Semiconductor
File Size 321.35 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC6675BZ Datasheet
Additional preview pages of the FDMC6675BZ datasheet.

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Full PDF Text Transcription

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FDMC6675BZ P-Channel PowerTrench® MOSFET FDMC6675BZ P-Channel Power Trench® MOSFET -30 V, -20 A, 14.4 mΩ Features „ Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A „ Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A „ HBM ESD protection level of 8 kV typical(note 3) „ Extended VGSS range (-25 V) for battery applications „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Termination is Lead-free and RoHS Compliant June 2009 General Description The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
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