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FDMC6675BZ - N-Channel MOSFET

General Description

The FDMC6675BZ has been designed to minimize losses in load switch applications.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

Load Switch in Notebook and Server Notebook Battery Pack Power Ma

Key Features

  • Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A.
  • Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A.
  • HBM ESD protection level of 8 kV typical(note 3).
  • Extended VGSS range (-25 V) for battery.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC6675BZ P-Channel PowerTrench® MOSFET FDMC6675BZ P-Channel Power Trench® MOSFET -30 V, -20 A, 14.4 mΩ Features „ Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A „ Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A „ HBM ESD protection level of 8 kV typical(note 3) „ Extended VGSS range (-25 V) for battery applications „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ Termination is Lead-free and RoHS Compliant June 2009 General Description The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.