FDMC6686P P-Channel MOSFET

ON Semiconductor

Description

MOSFET * P-Channel, POWERTRENCH) -20 V, -56 A, 4 mW FDMC6686P General .
This P. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(ON), switching performance and r.

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Datasheet Specifications

Part number: FDMC6686P
Manufacturer: ON Semiconductor ↗
File Size: 318.38 KB
Datasheet: FDMC6686P-ONSemiconductor.pdf
Description: P-Channel MOSFET

Features

* Max RDS(on) = 4 mW at VGS =
* 4.5 V, ID =
* 18 A
* Max RDS(on) = 5.7 mW at VGS =
* 2.5 V, ID =
* 16 A
* Max RDS(on) =11.5 mW at VGS =
* 1.8 V, ID =
* 11 A
* High Performance Trench Technology for Extremely Low RDS(on)

Applications

* Load Switch
* Battery Management
* Power Management
* Reverse Polarity Protection MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current
* Continuo

FDMC6686P Distributors

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FDMC6686P P-Channel MOSFET ON Semiconductor

ON Semiconductor FDMC6686P-like datasheet