FDMC6688P - P-Channel MOSFET

ON Semiconductor

FDMC6688P Datasheet Preview — Preview of FDMC6688P PDF

Datasheet Details

Part number	FDMC6688P
Manufacturer	ON Semiconductor ↗
File Size	410.91 KB
Description	P-Channel MOSFET
Datasheet	FDMC6688P-ONSemiconductor.pdf

FDMC6688P Product details

Description

This P Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness.

Features

Max RDS(on) = 6.5 mW at VGS =.
4.5 V, ID =.
14 A.
Max RDS(on) = 9.8 mW at VGS =.
2.5 V, ID =.
11 A.
Max RDS(on) = 20 mW at VGS =.
1.8 V, ID =.
9 A.
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 19, 2023 |