Description
MOSFET * P-Channel, POWERTRENCH) -20 V, -56 A, 6.5 mW FDMC6688P General .
This P.
Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been optimized for RDS(on), switching performance and r.
Features
* Max RDS(on) = 6.5 mW at VGS =
* 4.5 V, ID =
* 14 A
* Max RDS(on) = 9.8 mW at VGS =
* 2.5 V, ID =
* 11 A
* Max RDS(on) = 20 mW at VGS =
* 1.8 V, ID =
* 9 A
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and C
Applications
* Load Switch
* Battery Management
* Power Management
* Reverse Polarity Protection
MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
VDS
Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current
* Continuous, TC = 25