FDMC6686P
Features
General Description
- Max r DS(on) = 4 mΩ at VGS = -4.5 V, ID = -18 A
- Max r DS(on) = 5.7 mΩ at VGS = -2.5 V, ID = -16 A
- Max r DS(on) =11.5 mΩ at VGS = -1.8 V, ID = -11 A
- High performance trench technology for extremely low r DS(on)
- High power and current handling capability in a widely used surface mount package
- Lead-free and Ro HS pliant
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for r DS(ON), switching performance and ruggedness.
Applications
- Load Switch
- Battery Management
- Power Management
- Reverse Polarity Protection
Pin 1
Pin 1
S S SG
D DD D
Top Bottom
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current...
