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FDMC8010 - N-Channel PowerTrench MOSFET

General Description

April 2014 Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semic

Key Features

  • General.

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FDMC8010 N-Channel PowerTrench® MOSFET FDMC8010 N-Channel PowerTrench® MOSFET 30 V, 75 A, 1.3 mΩ Features General Description April 2014 „ Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.