FDMC86102L Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A
- Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A
- Low Profile
- 1 mm max in Power 33
- RoHS pliant
- DC Conversion
| Manufacturer | Part Number | Description |
|---|---|---|
| FDMC86102L | N-Channel MOSFET | |
| FDMC86102LZ | N-Channel MOSFET | |
| FDMC86102 | N-Channel MOSFET |