Datasheet Details
| Part number | FDMC86102L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 332.86 KB |
| Description | MOSFET |
| Datasheet |
 FDMC86102L Datasheet
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| Part number | FDMC86102L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 332.86 KB |
| Description | MOSFET |
| Datasheet |
FDMC86102L Datasheet
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Shielded Gate MOSFET Technology Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5.5 A Low Profile - 1 mm max in Power 33 RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application DC - DC Conversion Top Bottom Pin 1 SS S G S S D D MLP 3.3x3.3 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C
FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET FDMC86102L N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 18 A, 23 mΩ June.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDMC86102L | N-Channel MOSFET | ON Semiconductor |
|
FDMC86102LZ | N-Channel MOSFET | ON Semiconductor |
|
FDMC86102 | N-Channel MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
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