FDMC86240 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A
- Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A
- Low Profile
- 1 mm max in Power 33
- 100% UIL Tested
- RoHS pliant
- DC Conversion
- 55 to +150
| Part Number | Description |
|---|---|
| FDMC86244 | N-Channel Power Trench MOSFET |
| FDMC86248 | N-Channel Power Trench MOSFET |
| FDMC8622 | N-Channel Power Trench MOSFET |
| FDMC86259P | MOSFET |
| FDMC86260 | N-Channel Power Trench MOSFET |