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FDME410NZT Key Features

  • Max rDS(on) = 26 mΩ at VGS = 4.5 V, ID = 7 A
  • Max rDS(on) = 31 mΩ at VGS = 2.5 V, ID = 6 A
  • Max rDS(on) = 39 mΩ at VGS = 1.8 V, ID = 5 A
  • Max rDS(on) = 53 mΩ at VGS = 1.5 V, ID = 4 A
  • Low profile: 0.55 mm maximum in the new package
  • Free from halogenated pounds and antimony oxides
  • HBM ESD protection level > 1800V (Note3)
  • RoHS pliant

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FDME410NZT Description

0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin „ Free from halogenated pounds and antimony oxides „ HBM ESD protection level > 1800V (Note3) „ RoHS pliant This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.