FDME430NT
FDME430NT is N-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor.
FDME430NT N-Channel PowerTrench® MOSFET
October 2013
N-Channel PowerTrench® MOSFET
30 V, 6 A, 40 mΩ
Features
General Description
- Max rDS(on) = 40 mΩ at VGS = 4.5 V, ID = 6 A
- Max rDS(on) = 51 mΩ at VGS = 2.5 V, ID = 5 A
- Max rDS(on) = 71 mΩ at VGS = 1.8 V, ID = 4 A
- Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
- Free from halogenated pounds and antimony oxides
- RoHS pliant
This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET leadframe.
Applications
- Li-lon Battery Pack
- Baseband Switch
- Load Switch
- DC-DC...
