FDME410NZT
FDME410NZT is N-Channel MOSFET manufactured by Fairchild Semiconductor.
FDME410NZT N-Channel PowerTrench® MOSFET
October 2013
N-Channel PowerTrench® MOSFET
20 V, 7 A, 26 mΩ
Features
General Description
- Max rDS(on) = 26 mΩ at VGS = 4.5 V, ID = 7 A
- Max rDS(on) = 31 mΩ at VGS = 2.5 V, ID = 6 A
- Max rDS(on) = 39 mΩ at VGS = 1.8 V, ID = 5 A
- Max rDS(on) = 53 mΩ at VGS = 1.5 V, ID = 4 A
- Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
- Free from halogenated pounds and antimony oxides
- HBM ESD protection level > 1800V (Note3)
- RoHS pliant
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET...
