Datasheet Details
| Part number | FDME410NZT |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 253.40 KB |
| Description | N-Channel MOSFET |
| Download | FDME410NZT Download (PDF) |
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| Part number | FDME410NZT |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 253.40 KB |
| Description | N-Channel MOSFET |
| Download | FDME410NZT Download (PDF) |
|
|
|
Max rDS(on) = 26 mΩ at VGS = 4.5 V, ID = 7 A Max rDS(on) = 31 mΩ at VGS = 2.5 V, ID = 6 A Max rDS(on) = 39 mΩ at VGS = 1.8 V, ID = 5 A Max rDS(on) = 53 mΩ at VGS = 1.5 V, ID = 4 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated compounds and antimony oxides HBM ESD protection level > 1800V (Note3) RoHS Compliant This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
Applications Li-lon Battery Pack Baseband Switch Load Switch DC-DC Conversion G D Pin 1 D S D D S D D D D G S BOTTOM MicroFET 1.6x1.6 Thin TOP MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Power Dissipation for Single Operation TA = 25 °C Power Dissipation for Single Operation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 1a) (Note 1b) Ratings 20 ±8 7 15 2.1 0.7 -55 to +150 Units V V A W °C RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 60 (Note 1b) 175 °C/W Device Marking 6T Device FDME410NZT Package MicroFET 1.6x1.6 Thin Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units ©2011 Fairchild Semiconductor Corporation 1 FDME410NZT Rev.C3 www.fairchildsemi.com FDME410NZT N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero G
FDME410NZT N-Channel PowerTrench® MOSFET October 2013 FDME410NZT N-Channel PowerTrench® MOSFET 20 V, 7 A, 26.
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