FDMJ1032C Description
This dual N and P-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
FDMJ1032C Key Features
- Max rDS(on) = 90mΩ at VGS = 4.5V, ID = 3.2A
- Max rDS(on) = 130mΩ at VGS = 2.5V, ID = 2.5A
- Max rDS(on) = 160mΩ at VGS = -4.5V, ID = -2.5A
- Max rDS(on) = 230mΩ at VGS = -2.5V, ID = -2.0A
- Max rDS(on) = 390mΩ at VGS = -1.8V, ID = -1.0A
- Low gate charge, high power and current handling
- Battery management
- RoHS pliant
- Continuous
- Pulsed Power Dissipation for Single Operation