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Fairchild Semiconductor Electronic Components Datasheet

FDMJ1032C Datasheet

Dual N & P-Channel PowerTrench MOSFET

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FDMJ1032C
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 20V, 3.2A, 90mP-Channel: -20V, -2.5A, 160m
September 2007
tm
Features
Q1: N-Channel
„ Max rDS(on) = 90mat VGS = 4.5V, ID = 3.2A
„ Max rDS(on) = 130mat VGS = 2.5V, ID = 2.5A
Q2: P-Channel
„ Max rDS(on) = 160mat VGS = -4.5V, ID = -2.5A
„ Max rDS(on) = 230mat VGS = -2.5V, ID = -2.0A
„ Max rDS(on) = 390mat VGS = -1.8V, ID = -1.0A
„ Low gate charge, high power and current handling
capability
General Description
This dual N and P-Channel enhancement mode Power
MOSFET is produced using Fairchild Semiconductor’s
advanced PowerTrench® process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Application
„ Battery management
„ RoHS Compliant
Pin 1
S1 S2 G2
Bottom Drain Contact
D1 D2
G1 S1 S2
SC-75 MicroFET
S2 4
S1 5
G1 6
3 G2
2 S2
1 S1
Bottom Drain Contact
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
TA = 25°C
TA = 25°C (Note 1a)
TA = 25°C (Note 1b)
Thermal Characteristics
Q1 Q2
20 -20
±12 ±8
3.2 -2.5
12 -12
1.4
0.8
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient, Single Operation
Thermal Resistance, Junction to Ambient, Single Operation
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
89
182
°C/W
Device Marking
032
Device
FDMJ1032C
Package
SC-75 MicroFET
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMJ1032C Datasheet

Dual N & P-Channel PowerTrench MOSFET

No Preview Available !

Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
ID = -250µA, VGS = 0V
ID = 250µA, referenced to 25°C
ID = -250µA, referenced to 25°C
VDS = 16V, VGS = 0V
VDS = -16V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = ±8V, VDS = 0V
Q1 20
Q2 -20
V
Q1
Q2
13
-13
mV/°C
Q1
Q2
1
-1
µA
Q1
Q2
±100 nA
On Characteristics
VGS(th)
VGS(th)
TJ
rDS(on)
gFS
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
VGS = VDS, ID = -250µA
Q1 0.6 1.1 1.5
Q2 -0.4 -0.8 -1.5
V
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
ID = -250µA, referenced to 25°C
Q1
Q2
-3
3
mV/°C
VGS = 4.5V, ID = 3.2A
VGS = 2.5V, ID = 2.5A
VGS = 4.5V, ID = 3.2A, TJ = 125°C
Q1
70 90
100 130 m
83 132
Static Drain to Source On Resistance
VGS = -4.5V, ID = -2.5A
VGS = -2.5V, ID = -2.0A
VGS = -1.8V, ID = -1.0A
VGS = -4.5V, ID = -2.5A, TJ = 125°C
Q2
114 160
169
289
230
390
m
156 238
Forward Transconductance
VDD = 5V, ID = 3.2A
VDD = -5V, ID = -2.5A
Q1 7.5
Q2 5
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Q1
VDS = 10V, VGS = 0V, f = 1MHZ
Q2
VDS = -10V, VGS = 0V, f = 1MHZ
f = 1MHz
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
200 270
290 390
50 70
55 75
30 45
29 45
1
5
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg(TOT)
Total Gate Charge
Qgs Gate to Source Charge
Qgd Gate to Drain “Miller” Charge
Q1
VDD = 10V, ID = 1A,
VGS = 4.5V, RGEN = 6
Q2
VDD = -10V, ID = -1A,
VGS = -4.5V, RGEN = 6
Q1
VGS = 4.5V, VDD = 10V, ID = 3.2A
Q2
VGS = -4.5V, VDD = -10V, ID = -2.5A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
7
8
14
16
ns
8
13
16
23
ns
11
13
20
23
ns
2
18
4
32
ns
2
3
3
4
nC
0.4
0.6
nC
1.0
0.8
nC
©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
2
www.fairchildsemi.com


Part Number FDMJ1032C
Description Dual N & P-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
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