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FDMJ1032C - Dual N & P-Channel PowerTrench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FDMJ1032C
Manufacturer: Fairchild Semiconductor
File Size: 370.38 KB
Datasheet: FDMJ1032C-FairchildSemiconductor.pdf
Description: Dual N & P-Channel PowerTrench MOSFET

FDMJ1032C Product details

Description

This dual N and P-Channel enhancement mode Power.

Features

Q1: N-Channel.
Max rDS(on) = 90mΩ at VGS = 4.5V, ID = 3.2A.
Max rDS(on) = 130mΩ at VGS = 2.5V, ID = 2.5A Q2: P-Channel.
Max rDS(on) = 160mΩ at VGS = -4.5V, ID = -2.5A.
Max rDS(on) = 230mΩ at VGS = -2.5V, ID = -2.0A.
Max rDS(on) = 390mΩ at VGS = -1.8V, ID = -1.0A.
Low gate charge, high power and current handling capability General.

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Dual P-Channel PowerTrench MOSFET Fairchild Semiconductor

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