Datasheet4U Logo Datasheet4U.com

FDMJ1032C - Dual N & P-Channel PowerTrench MOSFET

Description

This dual N and P-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Battery management RoH

Features

  • Q1: N-Channel.
  • Max rDS(on) = 90mΩ at VGS = 4.5V, ID = 3.2A.
  • Max rDS(on) = 130mΩ at VGS = 2.5V, ID = 2.5A Q2: P-Channel.
  • Max rDS(on) = 160mΩ at VGS = -4.5V, ID = -2.5A.
  • Max rDS(on) = 230mΩ at VGS = -2.5V, ID = -2.0A.
  • Max rDS(on) = 390mΩ at VGS = -1.8V, ID = -1.0A.
  • Low gate charge, high power and current handling capability General.

📥 Download Datasheet

Datasheet preview – FDMJ1032C

Datasheet Details

Part number FDMJ1032C
Manufacturer Fairchild Semiconductor
File Size 370.38 KB
Description Dual N & P-Channel PowerTrench MOSFET
Datasheet download datasheet FDMJ1032C Datasheet
Additional preview pages of the FDMJ1032C datasheet.

📁 Similar Datasheet

  • FDM-2B - FDM-2B (ETC)
  • FDM100-0045SP - Buck Chopper (IXYS Corporation)
  • FDM21-05QC - Power MOSFET (IXYS Corporation)
  • FDM3622 - N-Channel MOSFET (ON Semiconductor)
  • FDMA037N08LC - N-Channel MOSFET (ON Semiconductor)
  • FDMA1023PZ - Dual P-Channel MOSFET (ON Semiconductor)
  • FDMA1024NZ - Dual N-Channel MOSFET (ON Semiconductor)
  • FDMA1027P - Dual P-Channel MOSFET (ON Semiconductor)
  • FDMA1028NZ - Dual N-Channel Power MOSFET (ON Semiconductor)
  • FDMA1029PZ - Dual P-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor
  • FDMJ1023PZ - Dual P-Channel PowerTrench MOSFET
  • FDMJ1028N - N-Channel 2.5V Specified PowerTrench MOSFET
  • FDM2452NZ - Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
  • FDM3300NZ - N-Channel MOSFET
  • FDM3622 - N-Channel PowerTrench MOSFET
  • FDM606P - P-Channel 1.8V Logic Level Power Trench MOSFET
  • FDM6296 - Single N-Channel / Logic-Level / PowerTrench MOSFET
  • FDMA0104 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
FDMJ1032C Dual N & P-Channel PowerTrench® MOSFET FDMJ1032C Dual N & P-Channel PowerTrench® MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ September 2007 tm Features Q1: N-Channel „ Max rDS(on) = 90mΩ at VGS = 4.5V, ID = 3.2A „ Max rDS(on) = 130mΩ at VGS = 2.5V, ID = 2.5A Q2: P-Channel „ Max rDS(on) = 160mΩ at VGS = -4.5V, ID = -2.5A „ Max rDS(on) = 230mΩ at VGS = -2.5V, ID = -2.0A „ Max rDS(on) = 390mΩ at VGS = -1.8V, ID = -1.0A „ Low gate charge, high power and current handling capability General Description This dual N and P-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Published: |