FDMJ1032C Datasheet | Fairchild Semiconductor

FDMJ1032C Dual N & P-Channel PowerTrench® MOSFET Dual N & P-Channel PowerTrench® MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ September 2007 tm Features Q1: N-Channel - Max rDS(on) = 90mΩ at VGS = 4.5V, ID = 3.2A - Max rDS(on) = 130mΩ at VGS = 2.5V, ID = 2.5A Q2: P-Channel - Max rDS(on) = 160mΩ at VGS = -4.5V, ID = -2.5A - Max rDS(on) = 230mΩ at VGS = -2.5V, ID = -2.0A - Max rDS(on) = 390mΩ at VGS = -1.8V, ID = -1.0A - Low gate charge, high power and current handling capability General Description This dual N and P-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially...