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FDMJ1028N N-Channel 2.5V Specified PowerTrench® MOSFET
June 2006
FDMJ1028N N-Channel 2.5V Specified PowerTrench® MOSFET
20V, 3.2A, 90mΩ
tm
Features
General Description
Max rDS(on) = 90mΩ at VGS = 4.5V Max rDS(on) = 130mΩ at VGS = 2.5V Low gate charge
High performance trench technology for extremely low rDS(on)
RoHS Compliant
This dual N-Channel 2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. The rDS(on) and thermal properties of the device are optimized for battery power management applications.