FDMJ1028N Description
Max rDS(on) = 90mΩ at VGS = 4.5V Max rDS(on) = 130mΩ at VGS = 2.5V Low gate charge High performance trench technology for extremely low rDS(on) RoHS pliant This dual N-Channel 2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. The rDS(on) and thermal properties of the device are optimized for battery power management applications. RθJA is determined with the device.
FDMJ1028N Key Features
- Max rDS(on) = 90mΩ at VGS = 4.5V
- Max rDS(on) = 130mΩ at VGS = 2.5V
- Low gate charge
- High performance trench technology for extremely low rDS(on)
- RoHS pliant