FDMJ1028N Datasheet | Fairchild Semiconductor

FDMJ1028N N-Channel 2.5V Specified PowerTrench® MOSFET June 2006 FDMJ1028N N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 3.2A, 90mΩ tm Features General Description - Max rDS(on) = 90mΩ at VGS = 4.5V - Max rDS(on) = 130mΩ at VGS = 2.5V - Low gate charge - High performance trench technology for extremely low rDS(on) - RoHS pliant This dual N-Channel 2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. The rDS(on) and thermal properties of the device are optimized for battery power management applications. Applications - Battery management - Baseband Switches Bottom Drain Contact 43 52 61 Bottom Drain Contact MOSFET Maximum Ratings TA = 25°C...