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FDMJ1028N - N-Channel 2.5V Specified PowerTrench MOSFET

General Description

Max rDS(on) = 90mΩ at VGS = 4.5V Max rDS(on) = 130mΩ at VGS = 2.5V Low gate charge High performance trench technology for extremely low rDS(on) RoHS Compliant This dual N-Channel 2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTren

Key Features

  • General.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMJ1028N N-Channel 2.5V Specified PowerTrench® MOSFET June 2006 FDMJ1028N N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 3.2A, 90mΩ tm Features General Description „ Max rDS(on) = 90mΩ at VGS = 4.5V „ Max rDS(on) = 130mΩ at VGS = 2.5V „ Low gate charge „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant This dual N-Channel 2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. The rDS(on) and thermal properties of the device are optimized for battery power management applications.