Datasheet Details
| Part number | FDMJ1028N |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 329.21 KB |
| Description | N-Channel 2.5V Specified PowerTrench MOSFET |
| Datasheet |
|
|
|
|
| Part number | FDMJ1028N |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 329.21 KB |
| Description | N-Channel 2.5V Specified PowerTrench MOSFET |
| Datasheet |
|
|
|
|
Max rDS(on) = 90mΩ at VGS = 4.5V Max rDS(on) = 130mΩ at VGS = 2.5V Low gate charge High performance trench technology for extremely low rDS(on) RoHS Compliant This dual N-Channel 2.5V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process.The rDS(on) and thermal properties of the device are optimized for battery power management applications.Applications Battery management Baseband Switches Bottom Drai
📁 Similar Datasheet