Datasheet4U Logo Datasheet4U.com

FDMJ1023PZ - Dual P-Channel PowerTrench MOSFET

General Description

This dual P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process.

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications.

Key Features

  • General.

📥 Download Datasheet

More Datasheets from Fairchild (now onsemi)

Part Number Description
FDMJ1028N N-Channel 2.5V Specified PowerTrench MOSFET
FDMJ1032C Dual N & P-Channel PowerTrench MOSFET
FDM2452NZ Monolithic Common Drain N-Channel 2.5V Specified PowerTrench MOSFET
FDM3300NZ N-Channel MOSFET
FDM3622 N-Channel PowerTrench MOSFET
FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET
FDM6296 Single N-Channel / Logic-Level / PowerTrench MOSFET
FDMA0104 N-Channel MOSFET
FDMA1023PZ Dual P-Channel PowerTrench MOSFET
FDMA1024NZ Dual N-Channel PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMJ1023PZ Dual P-Channel PowerTrench® MOSFET August 2007 FDMJ1023PZ ® Dual P-Channel PowerTrench MOSFET www.datasheet4u.com tm –20V, –2.9A, 112mΩ Features General Description This dual P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The SC-75 MicroFET package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. „ Max rDS(on) = 112mΩ at VGS = –4.