FDMJ1032C - Dual N & P-Channel PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMJ1032C
Manufacturer	Fairchild Semiconductor
File Size	370.38 KB
Description	Dual N & P-Channel PowerTrench MOSFET
Datasheet	FDMJ1032C Datasheet
Additional preview pages of the FDMJ1032C datasheet.

Product details

Description

This dual N and P-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Battery management RoHS Compliant Pin 1 S1 S2 G2 Bottom Drain Contact D1 D2 G1 S1 S2 SC-75 MicroFET S2 4 S1 5 G1 6 3 G2 2 S2 1 S1 Bottom Drain Contact MOSFET Maximum Ratings TA= 25°C unless otherwise noted Symbol

Features

Q1: N-Channel.
Max rDS(on) = 90mΩ at VGS = 4.5V, ID = 3.2A.
Max rDS(on) = 130mΩ at VGS = 2.5V, ID = 2.5A Q2: P-Channel.
Max rDS(on) = 160mΩ at VGS = -4.5V, ID = -2.5A.
Max rDS(on) = 230mΩ at VGS = -2.5V, ID = -2.0A.
Max rDS(on) = 390mΩ at VGS = -1.8V, ID = -1.0A.
Low gate charge, high power and current handling capability General.

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Published: Dec 28, 2015 |