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FDMJ1032C - Dual N & P-Channel PowerTrench MOSFET

Description

This dual N and P-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Battery management RoH

Features

  • Q1: N-Channel.
  • Max rDS(on) = 90mΩ at VGS = 4.5V, ID = 3.2A.
  • Max rDS(on) = 130mΩ at VGS = 2.5V, ID = 2.5A Q2: P-Channel.
  • Max rDS(on) = 160mΩ at VGS = -4.5V, ID = -2.5A.
  • Max rDS(on) = 230mΩ at VGS = -2.5V, ID = -2.0A.
  • Max rDS(on) = 390mΩ at VGS = -1.8V, ID = -1.0A.
  • Low gate charge, high power and current handling capability General.

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Full PDF Text Transcription

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FDMJ1032C Dual N & P-Channel PowerTrench® MOSFET FDMJ1032C Dual N & P-Channel PowerTrench® MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ September 2007 tm Features Q1: N-Channel „ Max rDS(on) = 90mΩ at VGS = 4.5V, ID = 3.2A „ Max rDS(on) = 130mΩ at VGS = 2.5V, ID = 2.5A Q2: P-Channel „ Max rDS(on) = 160mΩ at VGS = -4.5V, ID = -2.5A „ Max rDS(on) = 230mΩ at VGS = -2.5V, ID = -2.0A „ Max rDS(on) = 390mΩ at VGS = -1.8V, ID = -1.0A „ Low gate charge, high power and current handling capability General Description This dual N and P-Channel enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
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