FDMS0308CS
Description
Max rDS(on) = 3.0 m: at VGS = 10 V, ID = 21 A - Max rDS(on) = 3.5 m: at VGS = 4.5 V, ID = 17 A - Advanced Package and Silicon bination for low rDS(on) and high efficiency - SyncFET Schottky Body Diode - MSL1 robust package design - 100% UIL tested - RoHS pliant The FDMS0308CS has been designed to minimize losses in power conversion application.
Applications
- Notebook Vcore/ GPU low side switch
