Max rDS(on) = 3.0 m: at VGS = 10 V, ID = 21 A
Max rDS(on) = 3.5 m: at VGS = 4.5 V, ID = 17 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL teste
Full PDF Text Transcription for FDMS0308CS (Reference)
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FDMS0308CS N-Channel PowerTrench® SyncFETTM August 2010 FDMS0308CS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 3 m: Features General Description Max rDS(on) = 3.0 m: a...
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30 V, 42 A, 3 m: Features General Description Max rDS(on) = 3.0 m: at VGS = 10 V, ID = 21 A Max rDS(on) = 3.5 m: at VGS = 4.5 V, ID = 17 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested RoHS Compliant The FDMS0308CS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body di
FDMS0308CS Datasheet
