Download FDMS3610S Datasheet PDF
Fairchild Semiconductor
FDMS3610S
FDMS3610S is MOSFET manufactured by Fairchild Semiconductor.
FDMS3610S PowerTrench® Power Stage December 2011 PowerTrench® Power Stage 25V Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel - Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A - Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A Q2: N-Channel - Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A - Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A - Low inductance packaging shortens rise/fall times, resulting in lower switching losses - MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing - RoHS pliant General Description This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been...