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FDMS5672 - N-Channel MOSFET

General Description

Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A Typ Qg = 32nC at VGS = 10V Low Miller Charge Optimized Efficiency at High Frequencies RoHS Compliant UItraFET devices combine characteristics that ena

Key Features

  • General.

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FDMS5672 N-Channel UltraFET Trench® MOSFET FDMS5672 N-Channel UltraFET Trench® MOSFET 60V, 22A, 11.5mΩ March 2015 Features General Description „ Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A „ Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A „ Typ Qg = 32nC at VGS = 10V „ Low Miller Charge „ Optimized Efficiency at High Frequencies „ RoHS Compliant UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Application „ DC - DC Conversion Pin 1 S S SG DD D D Power 56 (Bottom view) D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted.