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Fairchild Semiconductor Electronic Components Datasheet

FDMS5672 Datasheet

N-Channel UltraFET Trench MOSFET

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FDMS5672
N-Channel UltraFET Trench® MOSFET
60V, 22A, 11.5m
Features
General Description
February 2007
tm
„ Max rDS(on) = 11.5mat VGS = 10V, ID = 10.6A
„ Max rDS(on) = 16.5mat VGS = 6V, ID = 8A
„ Typ Qg = 32nC at VGS = 10V
„ Low Miller Charge
„ Optimized efficiency at high frequencies
„ RoHS Compliant
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
Application
„ DC - DC Conversion
Pin 1
S S SG
DD DD
Power 56 (Bottom view)
D5
D6
Dwww.DataSheet4U.com
7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
60
±20
22
65
10.6
60
78
2.5
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.6
50
°C/W
Device Marking
FDMS5672
Device
FDMS5672
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMS5672 Rev.C1
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMS5672 Datasheet

N-Channel UltraFET Trench MOSFET

No Preview Available !

Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
ID = 250µA, referenced to 25°C
VDS = 48V, VGS = 0V
VGS = ±20V, VDS = 0V
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250µA
ID = 250µA, referenced to 25°C
VGS = 10V, ID = 10.6A
VGS = 6V, ID = 8A
VGS = 10V, ID = 10.6A,
TJ = 125°C
VDS = 10V, ID = 10.6A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 30V, VGS = 0V,
f = 1MHz
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 30V, ID = 10.6A
VGS = 10V, RGEN = 6
VGS = 0V to 10V VDD = 30V
ID = 10.6A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 10.6A (Note 2)
IF = 10.6A, di/dt = 100A/µs
Min Typ Max Units
60 V
59 mV/°C
1
±100
µA
nA
2 3.2 4
V
-11 mV/°C
9.4 11.5
13.0 16.5 m
15.0 18.0
26 S
2100
375
120
1.2
2800
500
180
pF
pF
pF
16 29 ns
17 31 ns
22 35 ns
8 16 ns
32 45 nC
10 nC
8.3 nC
0.80 1.20
35 53
42 63
V
ns
nC
Notes:
1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDMS5672 Rev.C1
2
www.fairchildsemi.com


Part Number FDMS5672
Description N-Channel UltraFET Trench MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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