FDMS5672 Datasheet | Fairchild Semiconductor

FDMS5672 N-Channel Ultra FET Trench® MOSFET FDMS5672 N-Channel Ultra FET Trench® MOSFET 60V, 22A, 11.5mΩ March 2015 Features General Description - Max r DS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A - Max r DS(on) = 16.5mΩ at VGS = 6V, ID = 8A - Typ Qg = 32n C at VGS = 10V - Low Miller Charge - Optimized Efficiency at High Frequencies - Ro HS pliant UItra FET devices bine characteristics that enable benchmark efficiency in power conversion applications. Optimized for r DS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Application - DC - DC Conversion Pin 1 S S SG DD D D Power 56 (Bottom view) D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted. Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Continuous -Pulsed TC = 25°C TC = 100°C TA = 25°C Single Pulse Avalanche...