FDMS5672 mosfet equivalent, n-channel mosfet.
General Description
* Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A
* Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A
* Typ Qg = 32nC at VGS = 10V
* Low Mille.
Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC c.
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