FDMS8020 Key Features
- Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 26 A
- Max rDS(on) = 3.6 mΩ at VGS = 4.5 V, ID = 21.5 A
- Advanced Package and Silicon bination for low rDS(on)
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant