Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, referenced to 25°C
16 mV/°C
IDSS Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
500 μA
IGSS
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
1.2 1.7 3.0
V
ID = 10 mA, referenced to 25°C
-5 mV/°C
VGS = 10 V, ID = 26 A
VGS = 4.5 V, ID = 23 A
VGS = 10 V, ID = 26 A, TJ = 125°C
VDS = 5 V, ID = 26 A
2.0 2.4
2.6 3.0 mΩ
2.7 3.3
168 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1MHz
2670
975
95
0.7
3550
1300
140
2.5
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 26 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 26 A
12 21 ns
5 10 ns
32 52 ns
4 10 ns
41 57 nC
20 28 nC
7.0 nC
5.4 nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 26 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 26 A, di/dt = 300 A/μs
0.63 0.8
0.8 1.2
29 46
32 51
V
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 86 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 24 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2010 Fairchild Semiconductor Corporation
FDMS8023S Rev.C2
2
www.fairchildsemi.com
