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Fairchild Semiconductor Electronic Components Datasheet

FDMS8023S Datasheet

MOSFET

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FDMS8023S
N-Channel PowerTrench® SyncFETTM
30 V, 49 A, 2.4 mΩ
October 2014
Features
General Description
„ Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 26 A
„ Max rDS(on) = 3.0 mΩ at VGS = 4.5 V, ID = 23 A
„ Advanced package and silicon combination for low rDS(on) and
high efficiency
„ SyncFET Schottky Body Diode
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
The FDMS8023S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore/GPU low side switch
„ Networking Point of Load low side switch
„ Telecom secondary side rectification
Top Bottom
Pin 1
S D5
S
S
G
D6
Power 56
D
D
D
D
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
49
128
26
100
86
59
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.1
50
°C/W
Device Marking
FDMS8023S
Device
FDMS8023S
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMS8023S Rev.C2
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDMS8023S Datasheet

MOSFET

No Preview Available !

Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, referenced to 25°C
16 mV/°C
IDSS Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
500 μA
IGSS
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
1.2 1.7 3.0
V
ID = 10 mA, referenced to 25°C
-5 mV/°C
VGS = 10 V, ID = 26 A
VGS = 4.5 V, ID = 23 A
VGS = 10 V, ID = 26 A, TJ = 125°C
VDS = 5 V, ID = 26 A
2.0 2.4
2.6 3.0 mΩ
2.7 3.3
168 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1MHz
2670
975
95
0.7
3550
1300
140
2.5
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 26 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 26 A
12 21 ns
5 10 ns
32 52 ns
4 10 ns
41 57 nC
20 28 nC
7.0 nC
5.4 nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 26 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 26 A, di/dt = 300 A/μs
0.63 0.8
0.8 1.2
29 46
32 51
V
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 86 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 24 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2010 Fairchild Semiconductor Corporation
FDMS8023S Rev.C2
2
www.fairchildsemi.com


Part Number FDMS8023S
Description MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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