FDMS8025S Key Features
- Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A
- Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A
- Advanced package and silicon bination for low rDS(on) and
- SyncFET Schottky Body Diode
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant