Datasheet Details
| Part number | FDMS8050ET30 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 234.51 KB |
| Description | MOSFET |
| Download | FDMS8050ET30 Download (PDF) |
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| Part number | FDMS8050ET30 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 234.51 KB |
| Description | MOSFET |
| Download | FDMS8050ET30 Download (PDF) |
|
|
|
Extended TJ rating to 175°C Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge and extremely low rDS(on).
Applications OringFET Synchronous Rectifier Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain
FDMS8050ET30 N-Channel PowerTrench® MOSFET January 2015 FDMS8050ET30 N-Channel PowerTrench® MOSFET 30 V, 423 A, 0.
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