FDMS8050ET30 datasheet, mosfet equivalent, Fairchild Semiconductor

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FDMS8050ET30 Features and benefits

General Description
* Extended TJ rating to 175°C
* Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A
* Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A
* Ad.

FDMS8050ET30 Application

* OringFET
* Synchronous Rectifier Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSFET.

FDMS8050ET30 Description

* Extended TJ rating to 175°C
* Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A
* Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* MSL1 robust package .

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