FDMS86102LZ Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FDMS86102LZ General Description

* Shielded Gate MOSFET Technology * Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 7 A * Max rDS(on) = 37 mΩ at VGS = 4.5 V, ID = 5.8 A * HBM ESD protection level > 6 KV typical (Note 4) * 100% UIL Tested * RoHS Compliant This N-Channel logic Level MOSFETs .

FDMS86102LZ Datasheet (349.75 KB)

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FDMS86102LZ

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Fairchild Semiconductor

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N-channel mosfet.
FDMS86102LZ N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86102LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 22 A, 25 mΩ Fea.

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FDMS86102LZ N-Channel MOSFET Fairchild Semiconductor

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FDMS86102LZ General Description

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