Datasheet Details
| Part number | FDMS86105 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 311.16 KB |
| Description | N-Channel MOSFET |
| Download | FDMS86105 Download (PDF) |
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Overview: FDMS86105 N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86105 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 26 A, 34.
| Part number | FDMS86105 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 311.16 KB |
| Description | N-Channel MOSFET |
| Download | FDMS86105 Download (PDF) |
|
|
|
Shielded Gate MOSFET Technology Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A Advanced package and silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Applications Primary DC-DC Secondary DC-DC Load Switch Top Bottom Pin 1 S S D S S G S D S D D D D G D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 100 ±20 26 6 30 50 48 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 2.6 (Note 1a) 50 °C/W Device Marking FDMS86105 Device FDMS86105 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2011 Fairchild Semiconductor Corporation 1 FDMS86105 Rev.C2 www.fairchildsemi.com FDMS86105 N-Channel Shielded Gate PowerTrench® MOSFET SS SF DS DF G SS SF DS DF G Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero
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