FDMS86105 Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FDMS86105 General Description

* Shielded Gate MOSFET Technology * Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 6 A * Max rDS(on) = 54 mΩ at VGS = 6 V, ID = 4.5 A * Advanced package and silicon combination for low rDS(on) and high efficiency * MSL1 robust package design * 100% UIL teste.

FDMS86105 Datasheet (311.16 KB)

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FDMS86105

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Fairchild Semiconductor

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311.16 KB

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N-channel mosfet.
FDMS86105 N-Channel Shielded Gate PowerTrench® MOSFET October 2014 FDMS86105 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 26 A, 34 mΩ Featur.

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FDMS86105 N-Channel MOSFET Fairchild Semiconductor

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FDMS86105 General Description

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