FDMS86150 mosfet equivalent, n-channel mosfet.
General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
* Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
* .
* Primary DC-DC MOSFET
* Secondary Synchronous Rectifier
* Load Switch
Top
Bottom
S
Pin 1
S
D
Pin 1
.
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