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FDMS86150ET100 - MOSFET

Product Overview

Fairchild Semiconductor

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FDMS86150ET100 MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – FDMS86150ET100

Datasheet Details

Part number	FDMS86150ET100
Manufacturer	Fairchild Semiconductor
File Size	234.74 KB
Description	MOSFET
Datasheet	FDMS86150ET100 Datasheet
Additional preview pages of the FDMS86150ET100 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Primary DC-DC MOSFET

Features

Extended TJ rating to 175°C.
Shielded Gate MOSFET Technology.
Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A.
Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant General.

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Published: Jan 10, 2017 |