FDMS86150ET100 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Applications Primary DC-DC MOSFET Secondary Synchronous Rectifier Load Switch Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSFET Maximum Ratings...
FDMS86150ET100 Key Features
- Extended TJ rating to 175°C
- Shielded Gate MOSFET Technology
- Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
- Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant