Datasheet Details
| Part number | FDMS86152 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 261.75 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMS86152-FairchildSemiconductor.pdf |
|
|
Overview: FDMS86152 N-Channel PowerTrench® MOSFET FDMS86152 N-Channel PowerTrench® MOSFET 100 V, 45 A, 6 mΩ March.
| Part number | FDMS86152 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 261.75 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMS86152-FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MSL1 robust package design 100% UIL tested RoHS Compliant Applications Primary DC-DC MOSFET Secondary Synchronous Rectifier Load Switch Top Pin 1 Bottom Pin 1 SSSG S S D D DDDD S D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 100 ±20 45 14 260 541 125 2.7 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.0 (Note 1a) 45 °C/W Device Marking FDMS86152 Device FDMS86152 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2013 Fairchild Semiconductor Corporation 1 FDMS86152 Rev.1.2 www.fairchildsemi.com FDMS86152 N-Channel PowerTrench® MOSFET SS SF DS DF G SS SF DS DF G Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA,
| Part Number | Description |
|---|---|
| FDMS86150 | N-Channel MOSFET |
| FDMS86150ET100 | MOSFET |
| FDMS86101 | N-Channel MOSFET |
| FDMS86101A | N-Channel MOSFET |
| FDMS86101DC | N-Channel MOSFET |
| FDMS86102LZ | N-Channel MOSFET |
| FDMS86103L | N-Channel MOSFET |
| FDMS86104 | N-Channel MOSFET |
| FDMS86105 | N-Channel MOSFET |
| FDMS86163P | P-Channel PowerTrench MOSFET |