FDMS86152 Description
Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A Advanced Package and Silicon bination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMS86152 Key Features
- Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A
- Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant