FDMS86152 - N-Channel MOSFET

Fairchild (now onsemi)

General Description

Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process than

Key Features

General.

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FDMS86152 n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FDMS86152
Manufacturer	Fairchild (now onsemi)
File Size	261.75 KB
Description	N-Channel MOSFET
Datasheet	FDMS86152 Datasheet

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FDMS86152 N-Channel PowerTrench® MOSFET FDMS86152 N-Channel PowerTrench® MOSFET 100 V, 45 A, 6 mΩ March 2015 Features General Description Max rDS(on) = 6 mΩ at VGS = 10 V, ID = 14 A Max rDS(on) = 11 mΩ at VGS = 6 V, ID = 11.5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.