FDMS86150
FDMS86150 is N-Channel MOSFET manufactured by Fairchild Semiconductor.
FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 80 A, 4.85 mΩ
March 2015
Features
General Description
- Shielded Gate MOSFET Technology
- Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
- Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
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