Datasheet Details
| Part number | FDMS86150 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 262.50 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMS86150_FairchildSemiconductor.pdf |
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Overview: FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 80 A, 4.
| Part number | FDMS86150 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 262.50 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDMS86150_FairchildSemiconductor.pdf |
|
|
|
Shielded Gate MOSFET Technology Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Applications Primary DC-DC MOSFET Secondary Synchronous Rectifier Load Switch Top Bottom S Pin 1 S D Pin 1 S S G S D D D D D S D G D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 100 ±20 80 16 300 726 156 2.7 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 0.8 (Note 1a) 45 °C/W Device Marking FDMS86150 Device FDMS86150 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation 1 FDMS86150 Rev.1.5 www.fairchildsemi.com FDMS86150 N-Channel Shielded Gate PowerTrench® MOSFET SS SF DS DF G SS SF DS DF G Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltag
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