FDMS86150 Description
Shielded Gate MOSFET Technology Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A Advanced Package and Silicon bination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process...
FDMS86150 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
- Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant