FDMS86200 Datasheet | Fairchild Semiconductor

FDMS86200 N-Channel Power Trench® MOSFET November 2012 N-Channel Power Trench® MOSFET 150 V, 49 A, 18 mΩ Features - Max r DS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A - Max r DS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - MSL1 robust package design - 100% UIL tested - Ro HS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application - DC-DC Conversion Top Bottom Pin 1 S S S S G S S D D D G D D D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TA = 25 °C (Note 1a) Ratings 150 ±20 49 9.6 100 220 104 2.5 -55 to +150 m J W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.2 50 °C/W Package Marking and Ordering Information Device Marking FDMS86200 Device FDMS86200 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMS86200 Rev.C3 .fairchildsemi. Free Datasheet http://../ FDMS86200 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise...