FDMS86200 - N-Channel MOSFET

Fairchild Semiconductor

The FDMS86200 by Fairchild Semiconductor is a N-Channel MOSFET. Below is the official datasheet preview.

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FDMS86200 N-Channel MOSFET by Fairchild Semiconductor - Datasheet Preview — Official preview page of the **FDMS86200** N-Channel MOSFET datasheet (Fairchild Semiconductor).

Datasheet Details

Part number	FDMS86200
Manufacturer	Fairchild Semiconductor
File Size	401.71 KB
Description	N-Channel MOSFET
Datasheet	FDMS86200_FairchildSemiconductor.pdf
Additional preview pages of the FDMS86200 datasheet.

FDMS86200 Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DC-DC Conversion Top Bottom Pin 1 S S S S G S S D D D G D D D D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Contin

Features

Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A.
Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
MSL1 robust package design.
100% UIL tested.
RoHS Compliant General.

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Published: Aug 8, 2013 |