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Fairchild Semiconductor Electronic Components Datasheet

FDMS86200 Datasheet

N-Channel MOSFET

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November 2012
FDMS86200
N-Channel Power Trench® MOSFET
150 V, 49 A, 18 mΩ
Features
General Description
„ Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A
„ Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.8 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ MSL1 robust package design
„ 100% UIL tested
Application
„ DC-DC Conversion
„ RoHS Compliant
Top Bottom
Pin 1
S
S
S
G
S
S
Power 56
D
D
D
D
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
150
±20
49
9.6
100
220
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2
50
°C/W
Device Marking
FDMS86200
Device
FDMS86200
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86200 Rev.C3
1
www.fairchildsemi.com
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Fairchild Semiconductor Electronic Components Datasheet

FDMS86200 Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
150 V
110 mV/°C
1 μA
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
2.0 2.5 4.0 V
ID = 250 μA, referenced to 25 °C
-10 mV/°C
VGS = 10 V, ID = 9.6 A
VGS = 6 V, ID = 8.8 A
VGS = 10 V, ID = 9.6 A, TJ = 125 °C
VDD = 10 V, ID = 9.6 A
15 18
17 21 mΩ
28 34
33 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
2041
203
10
1.2
2715
270
16
3
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Qgs Total Gate Charge
Qgd Gate to Drain “Miller” Charge
VDD = 75 V, ID = 9.6 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 75 V
ID = 9.6 A
13 23 ns
7.9 16 ns
27 44 ns
5.8 12 ns
33 46 nC
18 26 nC
7.9 nC
7.7 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 9.6 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 9.6 A, di/dt = 100 A/μs
0.69 1.2
0.77 1.3
V
76 120 ns
113 181 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. EAS of 220 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 21 A, VDD = 150 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 46 A.
FDMS86200 Rev.C3
2
www.fairchildsemi.com


Part Number FDMS86200
Description N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 7 Pages
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