FDMS86202 datasheet, mosfet equivalent, Fairchild Semiconductor

datasheet Download (Size : 262.63KB)

FDMS86202 Features and benefits

* Shielded Gate MOSFET Technology
* Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A
* Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A
* Advanced Package a.

FDMS86202 Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. A.

Image gallery