FDMS86202 Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

FDMS86202 mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FDMS86202
Manufacturer	Fairchild (now onsemi)
File Size	262.63 KB
Description	MOSFET
Download	FDMS86202 Download (PDF)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Application DC-DC Conversion RoHS Compliant Top Pin 1 Bottom S Pin 1 S S G S S D D D D D D SD GD Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Cont

Overview

FDMS86202 N-Channel Shielded Gate PowerTrench® MOSFET July 2014 FDMS86202 N-Channel Shielded Gate PowerTrench® MOSFET 120 V, 64 A, 7.

Key Features

Shielded Gate MOSFET Technology.
Max rDS(on) = 7.2 mΩ at VGS = 10 V, ID = 13.5 A.
Max rDS(on) = 10.3 mΩ at VGS = 6 V, ID = 11.5 A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
MSL1 robust package design.
100% UIL tested General.

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