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FDMS86310 Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDMS86310 N-Channel PowerTrench® MOSFET FDMS86310 N-Channel PowerTrench® MOSFET 80 V, 50 A, 4.

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General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Applications „ Primary Switch „ Synchronous Rectifier „ Motor Switch Top Pin 1 Bottom Pin 1 S S D S S G S D S D Power 56 D D D D G D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 80 ±20 50 105 17 100 183 96 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.3 (Note 1a) 50 °C/W Device Marking FDMS86310 Device FDMS86310 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation 1 FDMS86310 Rev.

C1 www.fairchildsemi.com FDMS86310 N-Channel PowerTrench® MOSFET SS SF DS DF G SS SF DS DF G Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol P

Key Features

  • Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A.
  • Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant October 2014 General.

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