FDMS86320 Key Features
- Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.5 A
- Max rDS(on) = 15 mΩ at VGS = 8 V, ID = 8.5 A
- Advanced Package and Silicon bination for low rDS(on)
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL Tested
- RoHS pliant