Datasheet Details
| Part number | FDMS86322 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 340.73 KB |
| Description | N-Channel MOSFET |
| Download | FDMS86322 Download (PDF) |
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| Part number | FDMS86322 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 340.73 KB |
| Description | N-Channel MOSFET |
| Download | FDMS86322 Download (PDF) |
|
|
|
Shielded Gate MOSFET Technology Max rDS(on) = 7.65 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 7.2 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
MSL1 robust package design 100% UIL tested RoHS Compliant Application DC-DC Conversion Top Bottom Pin 1 S S S G Power 56 D D DD S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 80 ±20 60 13 200 135 104 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 1.2 50 °C/W Device Marking FDMS86322 Device FDMS86322 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2010 Fairchild Semiconductor Corporation FDMS86322 Rev.C3 1 www.fairchildsemi.com FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Cu
FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86322 N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 60 A, 7.
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