Datasheet Details
| Part number | FDMS86350ET80 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 224.00 KB |
| Description | MOSFET |
| Download | FDMS86350ET80 Download (PDF) |
|
|
| Part number | FDMS86350ET80 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 224.00 KB |
| Description | MOSFET |
| Download | FDMS86350ET80 Download (PDF) |
|
|
|
Extended TJ rating to 175°C Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Applications Primary MOSFET Synchronous Rectifier Load Switch Motor Control Switch Top Pin 1 Bottom S Pin 1 S S G S S D D D D D D SD GD Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
FDMS86350ET80 N-Channel PowerTrench® MOSFET January 2015 FDMS86350ET80 N-Channel PowerTrench® MOSFET 80 V, 198 A, 2.
| Part Number | Description |
|---|---|
| FDMS86350 | N-Channel MOSFET |
| FDMS86300 | N-Channel MOSFET |
| FDMS86300DC | N-Channel MOSFET |
| FDMS86310 | N-Channel MOSFET |
| FDMS86320 | N-Channel MOSFET |
| FDMS86322 | N-Channel MOSFET |
| FDMS86368 | N-Channel PowerTrench MOSFET |
| FDMS86368_F085 | N-Channel PowerTrench MOSFET |
| FDMS86369_F085 | MOSFET |
| FDMS86101 | N-Channel MOSFET |