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FDMS8660S - N-Channel PowerTrench SyncFET

Description

Max rDS(on) = 2.4mΩ at VGS = 10V, ID = 25A Max rDS(on) = 3.5mΩ at VGS = 4.5V, ID = 21A Advanced Package and Silicon combination for low RDS(ON) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design RoHS Compliant tm T

Features

  • General.

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www.DataSheet4U.com FDMS8660S N-Channel PowerTrench® SyncFETTM August 2006 FDMS8660S N-Channel PowerTrench® SyncFETTM 30V, 40A, 2.4mΩ Features General Description „ Max rDS(on) = 2.4mΩ at VGS = 10V, ID = 25A „ Max rDS(on) = 3.5mΩ at VGS = 4.5V, ID = 21A „ Advanced Package and Silicon combination for low RDS(ON) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ RoHS Compliant tm The FDMS8660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(ON) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
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