FDMS8670AS Key Features
- Max rDS(on) = 3.0mΩ at VGS = 10V, ID = 23A
- Max rDS(on) = 4.7mΩ at VGS = 4.5V, ID = 18A
- Advanced Package and Silicon bination
- SyncFET Schottky Body Diode
- MSL1 robust package design
- RoHS pliant
- Part: FDMS8670AS
- Manufacturer: Fairchild (official site)
- Size: 247.32 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FDMS8670 | N-Channel Power Trench MOSFET |
| FDMS8670S | N-Channel MOSFET |
| FDMS8672AS | N-Channel MOSFET |
| FDMS8672S | N-Channel PowerTrench SyncFET |
| FDMS8674 | N-Channel MOSFET |
FDMS8670AS Description
Max rDS(on) = 3.0mΩ at VGS = 10V, ID = 23A Max rDS(on) = 4.7mΩ at VGS = 4.5V, ID = 18A Advanced Package and Silicon bination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design RoHS pliant The FDMS8670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest...