Datasheet4U Logo Datasheet4U.com

FDMS8670S - N-Channel MOSFET

Description

Max rDS(on) = 3.5m: at VGS = 10V, ID = 20A Max rDS(on) = 5.0m: at VGS = 4.5V, ID = 17A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design The FDMS8670S has been design

Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMS86101 N-Channel MOSFET ON Semiconductor
FDMS86101DC N-Channel MOSFET ON Semiconductor
FDMS86163P P-Channel MOSFET ON Semiconductor
FDMS86181 N-Channel MOSFET ON Semiconductor
FDMS86200 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDMS8670 N-Channel Power Trench MOSFET
FDMS8670AS N-Channel MOSFET
FDMS8672AS N-Channel MOSFET
FDMS8672S N-Channel PowerTrench SyncFET
FDMS8674 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMS8670S N-Channel PowerTrench® SyncFETTM October 2014 FDMS8670S N-Channel PowerTrench® SyncFETTM tm 30V, 42A, 3.5m: Features General Description „ Max rDS(on) = 3.5m: at VGS = 10V, ID = 20A „ Max rDS(on) = 5.0m: at VGS = 4.5V, ID = 17A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design The FDMS8670S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
Published: |