Datasheet Summary
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
February 2012
UniFET-IITM
FDP8N50NZF / FDPF8N50NZF
N-Channel MOSFET
500V, 7A, 1Ω Features
- RDS(on) = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A
- Low Gate Charge ( Typ. 14nC)
- Low Crss ( Typ. 5pF)
- Fast Switching
- 100% Avalanche Tested
- Improve dv/dt Capability
- ESD Improved Capability
- RoHS pliant
Description
This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode....