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FDP8N50NZF - N-Channel MOSFET

General Description

This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) = 0.85Ω ( Typ. ) @ VGS = 10V, ID = 3.25A.
  • Low Gate Charge ( Typ. 14nC).
  • Low Crss ( Typ. 5pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improve dv/dt Capability.
  • ESD Improved Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET February 2012 UniFET-IITM FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET 500V, 7A, 1Ω Features • RDS(on) = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A • Low Gate Charge ( Typ. 14nC) • Low Crss ( Typ. 5pF) • Fast Switching • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant Description This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.