FDS2070N7 mosfet equivalent, n-channel mosfet.
* 4.1 A, 150 V. RDS(ON) = 78 mΩ @ VGS = 10 V RDS(ON) = 88 mΩ @ VGS = 6.0 V
* High performance trench technology for extremely low RDS(ON)
* High power and cur.
* Synchronous rectifier
* DC/DC converter
Features
* 4.1 A, 150 V. RDS(ON) = 78 mΩ @ VGS = 10 V RDS(ON) = 8.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, provi.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 176.55KB)