* 3.0 A, 200 V. RDS(ON) = 128 mΩ @ VGS = 10 V
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability
.

* Synchronous rectifier
* DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, provi.

FDS2170N3

FDS2070N3

FDS2070N7

FDS2570

FDS2572

FDS2582

FDS2670

FDS2672

FDS2734

FDS010

FDS100BA60

FDS100CA100

FDS100CA120