FDS2170N3 mosfet equivalent, n-channel mosfet.
* 3.0 A, 200 V. RDS(ON) = 128 mΩ @ VGS = 10 V
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability
.
* Synchronous rectifier
* DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings.
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