FDS3580 mosfet equivalent, n-channel mosfet.
*
7.6 A, 80 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.031 Ω @ VGS = 6 V.
*
*
*
*
Low gate charge (34nC typical). Fast switching speed. High perf.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOS.
Image gallery
TAGS
Download (Size : 201.66KB)