FDS3601 mosfet equivalent, n-channel mosfet.
* 1.3 A, 100 V. RDS(ON) = 480 mΩ @ VGS = 10 V RDS(ON) = 530 mΩ @ VGS = 6 V
* Fast switching speed
* Low gate charge (3.7nC typical)
* High performance tre.
These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other .
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