FDS3680 mosfet equivalent, n-channel mosfet.
* 5.2 A, 100 V. RDS(ON) = 0.043 Ω @ VGS = 10 V RDS(ON) = 0.048 Ω @ VGS = 6 V.
* Low gate charge.
* Fast switching speed
* High performance trench technolo.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOS.
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