FDS3672
FDS3672 is N-Channel MOSFET manufactured by onsemi.
Features
- r DS(ON) = 19 m W (Typ.), VGS = 10 V, ID = 7.5 A
- Qg(tot) = 28 n C (Typ.), VGS = 10 V
- Low Miller Charge
- Low QRR Body Diode
- Optimized Efficiency at High Frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
- Pb- Free and Halide Free
Applications
- DC- DC Converters and Off- Line UPS
- Distributed Power Architecture and VRMs
- Primary Switch for 24 V and 48 V Systems
- High Voltage Synchronous Rectifier
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
Symbol
Parameter
Ratings Unit
VDSS Drain to Source Voltage
VGS Gate to Source Voltage
±20
Drain Current
Continuous (TA = 25°C, VGS = 10 V,
Rq JA = 50°C/W)
Continuous (TA = 100°C, VGS = 10 V,
Rq JA = 50°C/W)
Pulsed
Figure 4
EAS Single Pulse Avalanche Energy (Note 1) PD Power Dissipation
Derate above 25°C
416 m J
20 m W/°C
TJ, TSTG Operating and Storage Junction Temperature Range
- 55 to +150...
