FDS4435A Datasheet | Fairchild Semiconductor

Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook puter applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features • • • • -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V RDS(ON) = 0.025 W @ VGS = -4.5 V Low gate charge (21n C typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. 5 6 4 3 2 1 SO-8 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings -30 ± 20 (Note 1a) Units -9 -50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking Device Reel...