FDS4435A Datasheet, Fairchild Semiconductor

• • • • -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V RDS(ON) = 0.025 W @ VGS = -4.5 V Low gate charge (21nC typical). High performance trench technology for extremely low.

load switching and power management, battery charging circuits, and DC/DC conversion. Features • • • • -9 A, -30 V. RD.

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Thes.