FDS4435A - P-Channel MOSFET

Fairchild Semiconductor

FDS4435A Datasheet Preview — Preview of FDS4435A PDF

Datasheet Details

Part number	FDS4435A
Manufacturer	Fairchild ↗ Semiconductor
File Size	172.61 KB
Description	P-Channel MOSFET
Datasheet	FDS4435A_FairchildSemiconductor.pdf

FDS4435A Product details

Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

-9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V RDS(ON) = 0.025 W @ VGS = -4.5 V Low gate charge (21nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings -30 ± 20 (Note 1a) Units V V A W -9 -50 2.5 1.2.

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Published: Mar 30, 2005 |