FDS4435BZ Datasheet | Fairchild Semiconductor

Features - Max r DS(on) = 20m: at VGS = -10V, ID = -8.8A - Max r DS(on) = 35m: at VGS = -4.5V, ID = -6.7A - Extended VGSS range (-25V) for battery applications - HBM ESD protection level of ±3.8KV typical (note 3) - High performance trench technology for extremely low r DS(on) - High power and current handling capability - Termination is Lead-free and Ro HS pliant April 2009 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. Pin 1 SO-8 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS EAS TJ, TSTG Parameter Drain to Source...