FDS4435BZ - P-Channel PowerTrench MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDS4435BZ
Manufacturer	Fairchild ↗ Semiconductor
File Size	249.64 KB
Description	P-Channel PowerTrench MOSFET
Datasheet	FDS4435BZ_FairchildSemiconductor.pdf

FDS4435BZ Product details

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

Features

Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A.
Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A.
Extended VGSS range (-25V) for battery.

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Published: Feb 18, 2010 |