40v n-channel mosfet.
* 11 A, 40 V. RDS(ON) = 13 mΩ @ VGS = 4.5 V
* High performance trench technology for extremely
low RDS(ON)
* Low gate charge (35 nC typical)
* High power .
* DC/DC converter
Features
* 11 A, 40 V. RDS(ON) = 13 mΩ @ VGS = 4.5 V
* High performance trench technology.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.
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