* 16 A, 20 V. RDS(ON) = 6 mΩ @ VGS = 4.5 V RDS(ON) = 8 mΩ @ VGS = 2.5 V
* Low gate charge (57 nC)
* High performance trench technology for extremely low RDS(O.

* DC/DC converter D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Dra.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.

FDS6570A

FDS6574A

FDS6575

FDS6576

FDS6064N3

FDS6064N7

FDS6162N3

FDS6162N7

FDS6294

FDS6298

FDS6299S

FDS6375

FDS6609A