* rDS(on) = 5.5mΩ, VGS = 10V, ID = 16A
* rDS(on) = 7.0mΩ, VGS = 4.5V, ID = 15A
* High performance trench technology for extremely low rDS(on)
* Low gate c.

* DC/DC converters D D 5 D D 6 SO-8 G 7 S Pin 1 S S 8 MOSFET Maximum Ratings TA = 25°C unless otherwise n.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching s.

FDS8870

FDS8876

FDS8878

FDS8878-F123

FDS8812NZ

FDS8813NZ

FDS8817NZ

FDS8840NZ

FDS8842NZ

FDS8858CZ

FDS8880

FDS8882

FDS8884